PFP13N50 - 500V N-Channel MOSFET

Datasheet Summary

Features

Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 28 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.46 Ω (Typ. ) @VGS=10V.

PFP13N50 500V N-Channel MOSFET by Power Device - Datasheet Preview — Datasheet preview – PFP13N50

Datasheet Details

Part number	PFP13N50
Manufacturer	Power Device
File Size	1.02 MB
Description	500V N-Channel MOSFET
Datasheet	PFP13N50 Datasheet
Additional preview pages of the PFP13N50 datasheet.

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Feb 2009 PFP13N50/PFF13N50 FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 28 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.46 Ω (Typ.) @VGS=10V APPLICATION Electronic lamp ballasts based on half bridge topology PFC (Power Factor Correction) SMPS (Switched Mode Power Supplies) PFP13N50/PFF13N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on)typ = 0.46 Ω ID = 12.5 A Drain { Gate { ● ◀▲ ● ● Source { TO-220 TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3.

Published: Jan 13, 2015 |