PFP100N10S Datasheet, Mosfet, Wing On

PFP100N10S Features

• Mosfet  100% EAS Test  Super high density cell design  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Extended Safe Operating Area  Lower RDS(ON) : 7.2 mΩ (T

PDF File Details

Part number:

PFP100N10S

Manufacturer:

Wing On

File Size:

690.40kb

Download:

📄 Datasheet

Description:

N-channel super junction mosfet.

TAGS

PFP100N10S

Wing On

📁 Related Datasheet

PFP10N40 - N-Channel MOSFET (Wing On)
Sep 2008 PFP10N40 / PFF10N40 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances.

PFP10N60 - N-Channel MOSFET (Wing On)
Nov 2011 PFP10N60 / PFF10N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances.

PFP10N65 - N-Channel MOSFET (Wing On)
PFP10N65 / PFF10N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka.

PFP10N80A - N-Channel MOSFET (Wing On)
PFP10N80A / PFF10N80A FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar.

PFP10N80E - N-Channel MOSFET (Wing On)
PFP10N80E / PFF10N80E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar.

PFP110N10S - N-Channel Super Junction MOSFET (Wing On)
PFP110N10S / PFB110N10S FEATURES  100% EAS Test  Super high density cell design  Extremely Low Intrinsic Capacitances  Remarkable Switching Chara.

PFP12N65 - 650V N-Channel MOSFET (Wing On)
PFP12N65 / PFF12N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka.

PFP12N65E - N-Channel MOSFET (Wing On)
PFP12N65E / PFF12N65E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar.

PFP13N50 - N-Channel MOSFET (Wing On)
Feb 2009 PFP13N50 / PFF13N50 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances.

PFP13N50 - 500V N-Channel MOSFET (Power Device)
Feb 2009 PFP13N50/PFF13N50 FEATURES ‰ Originative New Design ‰ 100% EAS Test ‰ Rugged Gate Oxide Technology ‰ Extremely Low Intrinsic Capacitances ‰.