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PFP3205
High ruggedness MOSFET RDS(ON) (Typ 0.0068Ω)@VGS=10V Gate Charge (Typ 65nC) Improved dv/dt Capability Fast Switching 100% Avalanche Tested
N-channel Power MOSFET
TO-220
12 3
1. Gate 2. Drain 3. Source
BVDSS : 55[V] ID : 110[A] RDS(ON) : 0.008[Ω]
2
General Description
This power MOSFET has an excellent avalanche characteristics, and low RDS(ON) and low gate charge as well by using PowerGate semiconductor’s own and specialized design technology, These are well suited for high stress system such like motor control, amplifier, UPS, or DC to DC converter Which needs lower gate charge and on-resistance.
PFP3205 Datasheet
