Datasheet4U Logo Datasheet4U.com

PFP10N65 - N-Channel MOSFET

Datasheet Summary

Features

  •  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 30 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.8 Ω (Typ. ) @VGS=10V.

📥 Download Datasheet

Datasheet preview – PFP10N65

Datasheet Details

Part number PFP10N65
Manufacturer Wing On
File Size 1.32 MB
Description N-Channel MOSFET
Datasheet download datasheet PFP10N65 Datasheet
Additional preview pages of the PFP10N65 datasheet.

📁 Similar Datasheet

  • PFP13N50 - 500V N-Channel MOSFET (Power Device)
  • PFP18N50 - 500V N-Channel MOSFET (Power Device)
  • PFP - DIN Rail Mounting Track (Omron Electronics)
  • PFP3205 - N-channel Power MOSFET (PowerGate)
  • PFP4N60 - N-channel MOSFET (PowerGate)
  • PFP7N60 - N-channel MOSFET (PowerGate)
Other Datasheets by Wing On

Full PDF Text Transcription

Click to expand full text
PFP10N65 / PFF10N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 30 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.8 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFP10N65/PFF10N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) = 0.8 Ω ID = 9.5 A TO-220 Drain  Gate  ● ◀▲ ● ●  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3.
Published: |