BD250
Power Innovations Limited
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Pnp silicon power transistors.
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BD250 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BD250/A/B/C
..
DESCRIPTION ·With TO-3PN package ·Comp.
BD250 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector Current -IC= -25A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -45V(Min)- BD250; -60V(M.
BD2500 - 25A BOSCH TYPE PRESS-FIT DIODE
(Won-Top Electronics)
®
WON-TOP ELECTRONICS
Features
Diffused Junction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0µA
Mechanical .
BD2501 - 25A BOSCH TYPE PRESS-FIT DIODE
(Won-Top Electronics)
®
WON-TOP ELECTRONICS
Features
Diffused Junction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0µA
Mechanical .
BD2502 - 25A BOSCH TYPE PRESS-FIT DIODE
(Won-Top Electronics)
®
WON-TOP ELECTRONICS
Features
Diffused Junction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0µA
Mechanical .
BD2503 - 25A BOSCH TYPE PRESS-FIT DIODE
(Won-Top Electronics)
®
WON-TOP ELECTRONICS
Features
Diffused Junction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0µA
Mechanical .
BD2504 - 25A BOSCH TYPE PRESS-FIT DIODE
(Won-Top Electronics)
®
WON-TOP ELECTRONICS
Features
Diffused Junction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0µA
Mechanical .
BD2505 - 25A BOSCH TYPE PRESS-FIT DIODE
(Won-Top Electronics)
®
WON-TOP ELECTRONICS
Features
Diffused Junction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0µA
Mechanical .
BD2506 - 25A BOSCH TYPE PRESS-FIT DIODE
(Won-Top Electronics)
®
WON-TOP ELECTRONICS
Features
Diffused Junction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0µA
Mechanical .
BD250A - PNP SILICON POWER TRANSISTORS
(Power Innovations Limited)
BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997
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