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IRFP054N Power MOSFET

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Description

PD - 9.1382A IRFP054N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ful.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet Specifications

Part number
IRFP054N
Manufacturer
Power MOSFET
File Size
109.27 KB
Datasheet
IRFP054N_PowerMOSFET.pdf
Description
Power MOSFET

Features

* ES : 1 DIME NSIO NING & TO LERAN CING PE R AN SI Y 14.5M, 1982. 2 CO NTRO LLING DIMENS IO N : IN CH . 3 CO NF ORM S T O JEDE C O UTLINE T O-247-A C. 2 .4 0 (.09 4 ) 2 .0 0 (.07 9 ) 2X 5 .45 (.2 1 5) 2X 1 .4 0 (.0 56 ) 3 X 1 .0 0 (.0 39 ) 0 .25 (.0 10 ) M 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) C A S 0

Applications

* The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25°C I

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