IRFP064V Datasheet - Power MOSFET

IRFP064V Power MOSFET

l l D VDSS = 60V RDS(on) = 5.5mΩ G S ID = 130A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXF.

IRFP064V Features

* T S 1 2 3 4 G A TE D R A IN S O UR C E D R A IN -D D B M 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 2X 5.50 (.217) 4.50 (.177) N OTE S : 1 D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T

IRFP064V Datasheet (210.13 KB)