Part number:
2SB1424
Manufacturer:
Power Silicon
File Size:
193.43 KB
Description:
Pnp transistor.
* z PNP SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS z LOW COLLECTOR-EMITTER SATURATION VOLTAGE VCE(SAT) = -0.2V (TYP.) z COLLECTOR CURRENT IC/ IB = -2A / -0.1A .181 (4.6) .173( 4.4) .061 (1.55)REF. 0.063 (1.6 ) 0.055 (145 ) .1 6 7( 4. 2 5) . 15 5 (3 .9 4 ) . 10 2 (
2SB1424
Power Silicon
193.43 KB
Pnp transistor.
📁 Related Datasheet
2SB1420 - Silicon PNP Transistor
(Sanken electric)
(2 k Ω) (80 Ω) E
Darlington
sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1420 –120 –120 –6 –16(Pulse–26) –1 80(Tc=25°C) 150 –5.
2SB1420 - PNP Transistor
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isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·High DC Current Gain-
: hFE= 20.
2SB1421 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min) ·Wide Area of Safe Operation ·Complement to.
2SB1424 - PNP Transistor
(Rohm)
Transistors
2SB1424 / 2SA1585S
Low VCE(sat) Transistor (−20V, −3A)
2SB1424 / 2SA1585S
zFeatures 1) Low VCE(sat).
VCE(sat) = −0.2V (Typ.) (IC/IB = .
2SB1424 - Transistor
(GME)
Production specification
Low VCE(sat) Transistor(-20V,-3A)
FEATURES
Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA).
Pb
Lead-free
Excellent DC cur.
2SB1424 - PNP Transistor
(HOTTECH)
Plastic-Encapsulate Transistors
FEATURES
• Low VCE(SAT) =-0.2V(Typ.) (IC/IB=-2A/-0.1mA). • Excellent DC current gain characterisitics. • Complementar.
2SB1424 - Silicon PNP transistor
(BLUE ROCKET ELECTRONICS)
2SB1424
Rev.E Mar.-2016
DATA SHEET
/ Descriptions
SOT-89 PNP 。Silicon PNP transistor in a SOT-89 Plastic Package.
/ Features
，。 Low VCE(sat).
2SB1424 - Epitaxial Planar PNP Transistors
(Weitron Technology)
2SB1424
Epitaxial Planar PNP Transistors
P b Lead(Pb)-Free
1
1. BASE 2. COLLECTOR 3. EMITTER
SOT-89
2
3
C) ABSOLUTE MAXIMUM RATINGS (Ta=25%
Rating .
