BCR5PM
Powerex Power Semiconductors
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Triac. A triac is a solid state silicon AC switch which may be gate triggered from an off-state to an on-state for either polarity of appli
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BCR5PM - Triac
(Mitsubishi Electric Semiconductor)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR5PM
OUTLINE DRAWING
10.5 MAX 5.2
Dimensions in mm.
BCR5PM-12L - Triac
(Renesas Technology)
..
BCR5PM-12L
Triac
Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
REJ03G0460-0300 Rev.3.00 Mar 06,.
BCR5PM-12LA - Triac
(Renesas)
BCR5PM-12LA
Triac
Medium Power Use
Preliminary Datasheet
R07DS0100EJ0300 (Previous: REJ03G0302-0200)
Rev.3.00 Sep 13, 2010
Features
IT (RMS) : 5 A.
BCR5PM-12LG - Triac
(Renesas Technology)
BCR5PM-12LG
Triac
Medium Power Use
REJ03G1507-0200 Rev.2.00 Mar 06, 2007
Features
• IT (RMS) : 5 A • VDRM : 600 V .. • IFGTI, IRGTI,.
BCR5PM-14L - Triac
(Renesas Technology)
BCR5PM-14L
Triac
Medium Power Use
Features
• IT (RMS) : 5 A • VDRM : 700 V • IFGTI, IRGTI, IRGTⅢ : 30 mA • Viso : 2000 V
Outline
TO-220F
12 3
REJ03G0.
BCR5PM-14LD - Triac
(Renesas Technology)
BCR5PM-14LD
Triac
Medium Power Use
Features
IT (RMS) : 5 A VDRM : 700 V IFGTI , IRGTI, IRGT III : 50 mA Viso : 2000 V
Outline
RENESAS Package .
BCR5PM-14LG - Triac
(Renesas Technology)
BCR5PM-14LG
Triac
Medium Power Use
Features
IT (RMS) : 5 A VDRM : 800 V (Tj = 125C) IFGTI, IRGTI, IRGTIII : 30 mA Viso : 2000 V
Outline
RENES.
BCR5PM-14LJ - Triac
(Renesas)
BCR5PM-14LJ
700V - 5A - Triac
Medium Power Use
Features
IT (RMS): 5 A VDRM: 800 V (Tj =125°C) Tj: 150°C IFGTI, IRGTI, IRGT III: 30 mA
Outline
.
BCR5PM-14LJ - Thyristor
(INCHANGE)
isc Thyristors
INCHANGE Semiconductor
BCR5PM-14LJ
DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High mutation capability ·Minimu.
BCR503 - NPN Silicon Digital Transistor
(Siemens Semiconductor Group)
BCR 503
NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drive circuit • Built in bias resistor (R1=2.2kΩ, R2=2.2kΩ)
.