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CM150DU-12F Datasheet - Powerex Power Semiconductors

CM150DU-12F, IGBT Module

CM150DU-12F Powerex, Inc., 200 E.Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD™ 150 Amperes/600 V.
Powerex IGBTMOD™ Modules are designed for use in switching applications.
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CM150DU-12F_PowerexPowerSemiconductors.pdf

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Datasheet Details

Part number:

CM150DU-12F

Manufacturer:

Powerex Power Semiconductors

File Size:

351.43 KB

Description:

IGBT Module

Features

* Low Drive Power
* Low VCE(sat)
* Discrete Super-Fast Recovery Free-Wheel Diode

Applications

* Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

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