PSTG25HDT12 Datasheet - Powersem GmbH

PSTG25HDT12 Powerline N-Channel Trench Gate-IGBT

ECO-PACTM 1 Powerline N-Channel Trench GateIGBT Module PSTG 25HDT12 VCES VCE(sat) IC25 IC75 ICM tSC G N TC Preliminary Data Sheet = 1200 V = 1.9 V = 35 A = 25 A = 75 A = 10 µs H M L N BA C Symbol VCES VGES IC25 IC75 ICM Ptot tSC TVJ Tstg RthJC RthJC VISOL MD dS dA Weight Test Conditions TVJ = 25°C to 150°C continous TC = 25°C; TC = 75°C; TC = 75°C; TC = 75°C VCE = 80 VCES, RG = 10 Ω, VGE = ±15 V TVJ = 125°C, non-repetitive Maximum Ratings 1200 ±20 35 25 75 45 10 -40+150 -40+125 V V A A A .

PSTG25HDT12 Features

* Package with DCB ceramic base plate and soldering pins for PCB mounting

* Isolation voltage over 3000 V∼

* Trench Gate

* Enhancement Mode N-Channel Device

* Non Punch through Structure

* High Switching Speed

* Low On-state Saturation Voltage

PSTG25HDT12 Datasheet (148.20 KB)

PSTG25HDT12 Datasheet Preview — Preview of PSTG25HDT12 PDF

Datasheet Details

Part number:

PSTG25HDT12

Manufacturer:

Powersem GmbH

File Size:

148.20 KB

Description:

Powerline n-channel trench gate-igbt.

📁 Related Datasheet

PSTG25HTT12 Powerline N-Channel Trench Gate-IGBT (Powersem GmbH)

PSTG50HST12 Powerline N-Channel Trench Gate-IGBT (Powersem GmbH)

PSTG75HST12 Powerline N-Channel Trench Gate-IGBT (Powersem GmbH)

PST-2401 ISDN SIT INTERFACE TRANSFORMER FOR AT&T T7234 (Micro Electronics)

PST-N195CH16 HIGH POWER THYRISTOR (YZPST)

PST-N330CH26 HIGH POWER THYRISTOR (YZPST)

PST-N350SH18 HIGH POWER THYRISTOR (YZPST)

PST-R355SH12FLO HIGH POWER THYRISTOR (YZPST)

PST031B Sealed Choke Coil (CYNTEC)

PST031B-000 Sealed Choke Coil (CYNTEC)

TAGS

PSTG25HDT12 Powerline N-Channel Trench Gate-IGBT Powersem GmbH

Image Gallery

PSTG25HDT12 Distributor