PSTG25HTT12 Datasheet (Powersem GmbH) - Powerline N-Channel Trench Gate-IGBT

PSTG25HTT12, Powerline N-Channel Trench Gate-IGBT

ECO-PACTM 1 Powerline N-Channel Trench GateIGBT Triple Module PSTG 25HTT12 VCES VCE(sat) IC25 IC75 ICM tSC = 1200 V = 1.9 V = 35 A = 25 A = 75 A = 10 µs Preliminary Data Sheet Symbol VCES VGES IC25 IC75 ICM Ptot tSC TVJ Tstg RthJC RthJC VISOL MD dS dA Weight Test Conditions TVJ = 25°C to 150°C continous TC = 25°C; TC = 75°C; TC = 75°C; TC = 75°C VCE = 80 VCES, RG = 10 Ω, VGE = ±15 V TVJ = 125°C, non-repetitive Maximum Ratings 1200 ±20 35 25 75 45 10 -40+150 -40+125 V V A A A W µs °C °C K/W K

PSTG25HTT12 Features

* Package with DCB ceramic base plate and soldering pins for PCB mounting

* Isolation voltage over 3000 V∼

* Trench Gate

* Enhancement Mode N-Channel Device

* Non Punch through Structure

* High Switching Speed

* Low On-state Saturation Voltage