PSTG50HST12 Datasheet (Powersem GmbH) - Powerline N-Channel Trench Gate-IGBT

PSTG50HST12, Powerline N-Channel Trench Gate-IGBT

ECO-PACTM 1 Powerline N-Channel Trench GateIGBT Module PSTG 50HST12 VCES VCE(sat) IC25 IC75 ICM tSC I N H M Preliminary Data Sheet = 1200 V = 1.9 V = 72 A = 50 A = 150 A = 10 µs A B G Symbol VCES VGES IC25 IC75 ICM Ptot tSC TVJ Tstg RthJC RthJC VISOL MD dS dA Weight Test Conditions TVJ = 25°C to 150°C continous TC = 25°C; TC = 75°C; TC = 75°C; TC = 75°C VCE = 80 VCES, RG = 10 Ω, VGE = ±15 V TVJ = 125°C, non-repetitive Maximum Ratings 1200 ±20 72 50 150 90 10 -40+150 -40+125 V V A A A W µ

PSTG50HST12 Features

* Package with DCB ceramic base plate and soldering pins for PCB mounting

* Isolation voltage over 3000 V∼

* Trench Gate

* Enhancement Mode N-Channel Device

* Non Punch through Structure

* High Switching Speed

* Low On-state Saturation Voltage