PNM3FD20V1ELN
Description
The PNM3FD20V1ELN uses split gate trench technology to provide excellent RDS(ON) land ow gate charge. This device is suitable for power management and high efficiency applications at high switching frequencies applications.
VDS(V) 20
MOSFET Product Summary
RDS(on)(mΩ)(Typ) 145 @ VGS = 4.5V 173 @ VGS = 2.5V
HBM Pass 3.5k V
ID(A) 1.2
Feature
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Applications
- PWM applications
- Load switch
- Power management
- DC-DC Converters
- Wireless Chargers
Absolute maximum rating@25℃
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous1) Pulsed Drain Current2)
TC=25℃ TC=100℃
Total Power Dissipation3)
Thermal Resistance , Junction-to-Case4)
Thermal Resistance , Junction-to-Ambient4)
Junction and Storage Temperature Range
Symbol VDS VGS
IDM PD RθJC RθJA TJ,TSTG
PNM3FD20V1ELN N-Channel MOSFET
DFN1006-3L (Bottom View)
D(3)
G(1)
S(2)
Circuit...
