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Description
The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness.
MOSFET Product Summary
VDS(V) 20
RDS(on)(mΩ) 62 @ VGS = 4.5V 70 @ VGS = 2.5V
ID(A) 2
Feature
High Power and current handing capability Lead free product is acquired Surface Mount Package
Applications
PWM applications Load switch Power management
Absolute maximum rating@25℃
Rating Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current Total Power Dissipation Channel to ambient Junction and Storage Temperature Range
PNM3FD20V2 N-Channel MOSFET
Bottom View
D(3)
G(1)
S(2)
Circuit Diagram
P4 G D S
Marking (Top View)
Symbol VDS VGS ID IDP PD
Rth(ch-a) TJ,TSTG
Value 20
±12 2 6
300 420 -55~+150
Units V V A A
mW ℃/W
℃
Rev.06.1
1
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