Datasheet Details
| Part number | PNM3FD20V1EN |
|---|---|
| Manufacturer | Prisemi |
| File Size | 282.16 KB |
| Description | N-Channel MOSFET |
| Datasheet | PNM3FD20V1EN-Prisemi.pdf |
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Overview: Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) 20 MOSFET Product Summary RDS(on)(mΩ) ID(A) 200@ VGS=4.5V 250@ VGS=2.
| Part number | PNM3FD20V1EN |
|---|---|
| Manufacturer | Prisemi |
| File Size | 282.16 KB |
| Description | N-Channel MOSFET |
| Datasheet | PNM3FD20V1EN-Prisemi.pdf |
|
|
|
The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) 20 MOSFET Product Summary RDS(on)(mΩ) ID(A) 200@ VGS=4.5V 250@ VGS=2.5V ±1 310@ VGS=1.8V PNM3FD20V1EN N-Channel MOSFET G(1) D(3) S(2) Top View Absolute maximum rating@25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Total power dissipation Channel temperature Range of storage temperature Continuous Pulsed Symbol VDS VGS ID IDP PD TJ TSTG Value 20 ±10 ±1 ±4 300 150 -55 to +150 Units V V A mW ℃ ℃ Thermal resistance Parameter Channel to ambient Symbol Rth(ch-a) Limits 420 Units ℃/W Rev.06.1 1 www.prisemi.com N-Channel MOSFET PNM3FD20V1EN Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Symbol BVDSS IDSS IGSS VGS(th) Static Drain-Source On-Resistance RDS(ON) Forward transfer admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-On Fall Time Drain-Source Diode Forward Voltage gFS CISS COSS CRSS QG QGS QGD td(on) td(off) tr tf VSD Conditions ID =1mA,VGS=0V VDS =20V,VGS=0V VDS =0V,VGS=±8V VDS = VGS , ID =250uA VGS=4.5V, ID =0.65A VGS=2.5V, ID =0.45A VGS=1.8V, ID =0.25A VDS=10V, ID =300mA VGS=0V, VDS =10V, f=1MHz VGS=4.5V, VDS =10V, ID =0.01A VDD=6V, VGS =4.5V, RG=50Ω,RL=12Ω ID =500mA VGS=0V,IS=100mA Min.
20 0.4 - Typ.
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