Datasheet Summary
Description
The PNM3FD20V1ELN uses split gate trench technology to provide excellent RDS(ON) land ow gate charge. This device is suitable for power management and high efficiency applications at high switching frequencies applications.
VDS(V) 20
MOSFET Product Summary
RDS(on)(mΩ)(Typ) 145 @ VGS = 4.5V 173 @ VGS = 2.5V
HBM Pass 3.5kV
ID(A) 1.2
Feature
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Applications
- PWM applications
- Load switch
- Power management
- DC-DC Converters
- Wireless...