The PNM3FD20V1ELN uses split gate trench technology to provide excellent RDS(ON) land ow gate charge.
This device is suitable for power management and high efficiency applications at high switching frequencies applications.
| Part number | PNM3FD20V1ELN |
|---|---|
| Manufacturer | Prisemi |
| File Size | 387.62 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 PNM3FD20V1ELN Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| PNM3FD703E0-2 | MOSFET | msksemi |
| PNM | Precision Thin Film Non-Magnetic Resistor | Vishay |
| PNM-2751L-R | MICROPHONE | Projects Unlimited |
| PNM-3546L-R | MICROPHONE | Projects Unlimited |
| PNM-5250L-R | MICROPHONE | Projects Unlimited |
| Part Number | Description |
|---|---|
| PNM3FD20V1E | N-Channel MOSFET |
| PNM3FD20V1EMN | N-Channel MOSFET |
| PNM3FD20V1EN | N-Channel MOSFET |
| PNM3FD20V2 | N-Channel MOSFET |
| PNM523T201E0 | N-Channel MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
