Datasheet Details
| Part number | PNM3FD20V1ELN |
|---|---|
| Manufacturer | Prisemi |
| File Size | 387.62 KB |
| Description | N-Channel MOSFET |
| Datasheet | PNM3FD20V1ELN-Prisemi.pdf |
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Overview: Description The PNM3FD20V1ELN uses split gate trench technology to provide excellent RDS(ON) land ow gate charge.
| Part number | PNM3FD20V1ELN |
|---|---|
| Manufacturer | Prisemi |
| File Size | 387.62 KB |
| Description | N-Channel MOSFET |
| Datasheet | PNM3FD20V1ELN-Prisemi.pdf |
|
|
|
The PNM3FD20V1ELN uses split gate trench technology to provide excellent RDS(ON) land ow gate charge.
This device is suitable for power management and high efficiency applications at high switching frequencies applications.
VDS(V) 20 ESD MOSFET Product Summary RDS(on)(mΩ)(Typ) 145 @ VGS = 4.5V 173 @ VGS = 2.5V HBM Pass 3.5kV ID(A) 1.2
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