PNM723T703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. PNM723T703E0-2 N-Channel MOSFET D(3) VDS(V) 40 MOSFET Product Summary RDS(on)(Ω) VGS(th)(V) 7.5@ VGS=10V 0.5 to 1.5 ID(A) 0.18 G(1) S(2) Electric.