PNM3FD20V1EMN
Description
The MOSFET provide the best bination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) 20
MOSFET Product Summary
RDS(on)(mΩ)
ID(A)
200@ VGS=4.5V
250@ VGS=2.5V
±1
310@ VGS=1.8V
PNM3FD20V1EMN N-Channel MOSFET
G(1) D(3)
S(2)
Top View
Absolute maximum rating@25℃
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Total power dissipation Channel temperature Range of storage temperature
Continuous Pulsed
Symbol
VDS VGS ID IDP PD TJ TSTG
Value
20 ±10 ±1 ±4 300 150 -55 to +150
Units
A m W ℃ ℃
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a)
Limits
Units
℃/W
Rev.06.1
.prisemi.
N-Channel MOSFET
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter...
