Datasheet4U Logo Datasheet4U.com

PNMT60V02 Datasheet, Mosfet, Prisemi

✔ PNMT60V02 Application

PDF File Details

Part number:

PNMT60V02

Manufacturer:

Prisemi

File Size:

140.98kb

Download:

📄 Datasheet

Description:

N-channel mosfet. PNMT60V02 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resist

Datasheet Preview: PNMT60V02 📥 Download PDF (140.98kb)
Page 2 of PNMT60V02 Page 3 of PNMT60V02

TAGS

PNMT60V02
N-Channel
MOSFET
Prisemi

📁 Related Datasheet

PNMT6N1 - Transistor (Prisemi)
Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS pliant. PNMT6N1 is posed by a transistor and a MOSFET Transistor:  Very low c.

PNMT6N1-LB - Transistor (Prisemi)
Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS pliant. PNMT6N1-LB is posed by a transistor and a MOSFET Transistor:  Very lo.

PNMT6N2 - Transistor (Prisemi)
Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS pliant. PNMT6N2 is posed by a transistor and a MOSFET Transistor:  Very low c.

PNMT6N2B - Transistor (Prisemi)
PNMT6N2B Transistor with N-MOSFET Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS pliant. PNMT6N2B is posed by a transistor and .

PNMT20V6 - N-Channel MOSFET (Prisemi)
Description The enhancement mode MOS is extremely high density cell and low on-resistance. VDS(V) 20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.02.

PNMT2302 - N-Channel MOSFET (Prisemi)
Description  Trench Power LV MOSFET technology  High Power and current handing capability MOSFET Product Summary VDS(V) 20 RDS(on)(mΩ) 30@VGS = 4.

PNMT3400 - N-Channel MOSFET (Prisemi)
Description  Trench Power LV MOSFET technology  High density cell design for low RDS(ON)  High Speed switching MOSFET Product Summary VDS(V) 30 .

PNMT50V02E - N-Channel MOSFET (Prisemi)
Description The MOSFET provide the best bination of fast switching, low on-resistance and cost-effectiveness. VDS(V) 50 MOSFET Product Summary R.

PNMT7002E - N-Channel MOSFET (Prisemi)
Description The MOSFET provide the best bination of fast switching , low on-resistance and cost-effectiveness.  Trench Power MV MOSFET technology .

PNMTO600V4 - N-Channel MOSFET (Prisemi)
PNMTO600V4 PNMTOF600V4 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(2) VDS(V) 600 .

Since 2006. D4U Semicon. Datasheet4U.com Contact Us Privacy Policy Purchase of parts