PNMT60V02 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) VDS(V) 60 MOSFET Product Summary RDS(on)(Ω) VGS(th)(V) 7.5@ VGS=10V 0.5 to 1.5 ID(A) 0.18 G(1) S(2) Electrical characteristics per line@25℃( unles.