PNMT6N2B Datasheet, Transistor, Prisemi

PDF File Details

Part number:

PNMT6N2B

Manufacturer:

Prisemi

File Size:

2.69MB

Download:

📄 Datasheet

Description:

Transistor.

Datasheet Preview: PNMT6N2B 📥 Download PDF (2.69MB)
Page 2 of PNMT6N2B Page 3 of PNMT6N2B

TAGS

PNMT6N2B
Transistor
Prisemi

📁 Related Datasheet

PNMT6N2 - Transistor (Prisemi)
Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS pliant. PNMT6N2 is posed by a transistor and a MOSFET Transistor:  Very low c.

PNMT6N1 - Transistor (Prisemi)
Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS pliant. PNMT6N1 is posed by a transistor and a MOSFET Transistor:  Very low c.

PNMT6N1-LB - Transistor (Prisemi)
Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS pliant. PNMT6N1-LB is posed by a transistor and a MOSFET Transistor:  Very lo.

PNMT60V02 - N-Channel MOSFET (Prisemi)
PNMT60V02 N-Channel MOSFET Description PNMT60V02 is designed for high speed switching applications The enhancement mode MOS is extremely high density .

PNMT20V6 - N-Channel MOSFET (Prisemi)
Description The enhancement mode MOS is extremely high density cell and low on-resistance. VDS(V) 20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.02.

PNMT2302 - N-Channel MOSFET (Prisemi)
Description  Trench Power LV MOSFET technology  High Power and current handing capability MOSFET Product Summary VDS(V) 20 RDS(on)(mΩ) 30@VGS = 4.

PNMT3400 - N-Channel MOSFET (Prisemi)
Description  Trench Power LV MOSFET technology  High density cell design for low RDS(ON)  High Speed switching MOSFET Product Summary VDS(V) 30 .

PNMT50V02E - N-Channel MOSFET (Prisemi)
Description The MOSFET provide the best bination of fast switching, low on-resistance and cost-effectiveness. VDS(V) 50 MOSFET Product Summary R.

PNMT7002E - N-Channel MOSFET (Prisemi)
Description The MOSFET provide the best bination of fast switching , low on-resistance and cost-effectiveness.  Trench Power MV MOSFET technology .

PNMTO600V4 - N-Channel MOSFET (Prisemi)
PNMTO600V4 PNMTOF600V4 N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(2) VDS(V) 600 .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts