PNMT7002E
Prisemi
1.13MB
N-channel mosfet. The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness. * Trench Power MV MOSFET techno
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📁 Related Datasheet
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(Prisemi)
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
VDS(V) 20
MOSFET Product Summary
RDS(on)(Ω)
ID(A)
0.02.
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(Prisemi)
Description
The MOSFET provide the best bination of fast switching, low on-resistance and cost-effectiveness.
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R.
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(Prisemi)
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Description
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(Prisemi)
Feature
This device is Pb-Free, Halogen Free/BFR Free and RoHS pliant. PNMT6N1 is posed by a transistor and a MOSFET
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Very low c.
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(Prisemi)
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This device is Pb-Free, Halogen Free/BFR Free and RoHS pliant. PNMT6N1-LB is posed by a transistor and a MOSFET
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(Prisemi)
Feature
This device is Pb-Free, Halogen Free/BFR Free and RoHS pliant. PNMT6N2 is posed by a transistor and a MOSFET
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Very low c.
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(Prisemi)
PNMT6N2B Transistor with N-MOSFET
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This device is Pb-Free, Halogen Free/BFR Free and RoHS pliant. PNMT6N2B is posed by a transistor and .
PNMTO600V4 - N-Channel MOSFET
(Prisemi)
PNMTO600V4 PNMTOF600V4 N-Channel MOSFET
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
D（2）
VDS(V) 600
.
