Datasheet Details
| Part number | PPM3T18V6 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 269.87 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 PPM3T18V6-Prisemi.pdf
|
| Part number | PPM3T18V6 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 269.87 KB |
| Description | P-Channel MOSFET |
| Datasheet |
PPM3T18V6-Prisemi.pdf
|
PPM3T18V6 P-Channel MOSFET The enhancement mode MOS is extremely high density cell and low on-resistance.This PPM3T18V6 uses advanced trench technology to provide excellent RDS(on), low gate voltages as low as 2.5V.This device is suitable for use as a load switching application and a wide variety of other applications.D（3） VDS(V) >-18 MOSFET Product Summary RDS(on)(mΩ)
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