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PPMT30V4 Datasheet - Prisemi

PPMT30V4 P-Channel MOSFET

The enhancement mode MOS is extremely high density cell and low on-resistance. D（3） VDS(V) -30 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.053 @ VGS=-10V 0.065@ VGS=-4.5V -4.2 G（1） S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Vol.

PPMT30V4-Prisemi.pdf

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Datasheet Details

Part number:

PPMT30V4

Manufacturer:

Prisemi

File Size:

256.67 KB

Description:

P-channel mosfet.

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