PPMT30V4 - P-Channel MOSFET
The enhancement mode MOS is extremely high density cell and low on-resistance.
D(3) VDS(V) -30 MOSFET Product Summary RDS(on)(mΩ) ID(A) 43 @ VGS=-10V -4.2 53@ VGS=-4.5V G(1) S(2) Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Z