Datasheet Details
| Part number | PPMT30V3A |
|---|---|
| Manufacturer | Prisemi |
| File Size | 401.22 KB |
| Description | P-Channel MOSFET |
| Download | PPMT30V3A Download (PDF) |
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Overview: Description PPMT30V3A P-Channel MOSFET The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness.
| Part number | PPMT30V3A |
|---|---|
| Manufacturer | Prisemi |
| File Size | 401.22 KB |
| Description | P-Channel MOSFET |
| Download | PPMT30V3A Download (PDF) |
|
|
|
PPMT30V3A P-Channel MOSFET The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness.
Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / Output Leakage MOSFET Product Summary VDS(V) -30 RDS(on)(mΩ) 50@VGS = -10V 72@VGS = -4.5V ID(A) -3.0 Top View D(3) G(1) Applications Battery operated systems Solid-state relays Direct logic-level interface：TTL/CMOS S(2) Circuit Diagram D(3) PT33A Absolute maximum rating@25℃ Rating Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current Total Power Dissipation1) Junction and Storage Temperature Range G(1) S(2) Marking (Top View) Symbol VDS VGS ID IDM PD TJ,TSTG Value -30 ±20 -3.0 -15 0.78 -55~+150 Units V V A A W ℃ Thermal Resistance Parameter Symbol Min Typ Thermal Resistance, Junction-to-Case2) RθJC - 23.6 Thermal Resistance, Junction-to-Ambient2) RθJA - 109 Notes： 1.
Tc=124℃ Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
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