Datasheet Details
| Part number | PPMT30V4 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 256.09 KB |
| Description | P-Channel MOSFET |
| Download | PPMT30V4 Download (PDF) |
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Overview: PPMT30V4 P-Channel MOSFET.
| Part number | PPMT30V4 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 256.09 KB |
| Description | P-Channel MOSFET |
| Download | PPMT30V4 Download (PDF) |
|
|
|
The enhancement mode MOS is extremely high density cell and low on-resistance.
D（3） VDS(V) -30 MOSFET Product Summary RDS(on)(mΩ) ID(A) 43 @ VGS=-10V -4.2 53@ VGS=-4.5V G（1） S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Trans conductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Symbol Conditions OFF CHARACTERISTICS BVDSS ID =-250μA,VGS=0V IDSS VDS =-24V,VGS=0V IGSS VDS =0V,VGS=±12V VGS(th) VDS =VGS, ID =-250μA VGS=-10V, ID =-4.2A RDS(ON) VGS=-4.5V, ID =-4A VGS=-2.5V, ID =-2A gFS VGS=-5V, ID =-5A, TA=125℃ DYNAMIC PARAMETERS CISS CDSS CRSS VGS=0V, VDS =-15V, f=1MHz SWITCHING PARAMETERS td(on) td(off) VDD=-15V, VGS =-10V, RL=3.6Ω, RG=6Ω Min.
Typ.
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