PPMT30V4 Overview
The enhancement mode MOS is extremely high density cell and low on-resistance. Drain Current VGS=-2.5V VGS=-4.5V VGS=-10V 2 4 6 8 10 ID- Drain Current (A) Fig 4. Drain-Source On-Resistance .prisemi.
Datasheet Details
| Part number | PPMT30V4 |
|---|---|
| Datasheet | PPMT30V4-Prisemi.pdf |
| File Size | 256.09 KB |
| Manufacturer | Prisemi |
| Description | P-Channel MOSFET |
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