PPMT30V3 Overview
Description
The enhancement mode MOS is extremely high density cell and low on-resistance. D（3） VDS(V) -30 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.058 @ VGS=-10V -3 0.075@ VGS=-4.5V G（1） S（2） Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistancea Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-On Fall Time Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate resistance Drain-Source Diode Forward Voltage Rev.06.2 Symbol Conditions OFF/ON CHARACTERISTICS BVDSS ID =-250μA,VGS=0V IDSS VDS =-30V,VGS=0V IGSS VDS =0V,VGS=±20V VGS(th) VDS =VGS, ID =-250μA RDS(ON) VGS=-4.5V, ID =-2.5A VGS=-10V, ID =-3.2A DYNAMIC PARAMETERS CISS COSS CRSS VGS=0V, VDS =-15V, f=1MHz SWITCHING PARAMETERS td(on) td(off) tr VDS=-15V, VGS =-10V, RG=6Ω,RL=15Ω tf Qg VDS=-15V, VGS =-10V, ID =-1.7A Qg Qgs Qgd Rg VSD VDS=-15V, VGS =-4.5V, ID =-1.7A VDS=0V,VGS=0V,f=1MHz VGS=0V,IS=-1.0A 1 Min.
