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PPMT30V3 P-Channel MOSFET
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
D（3）
VDS(V) -30
MOSFET Product Summary
RDS(on)(Ω)
ID(A)
0.058 @ VGS=-10V -3
0.075@ VGS=-4.5V
G（1）
S（2）
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
Gate-Body Leakage Current Gate Threshold Voltage
Static Drain-Source On-Resistancea
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-On Fall Time Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge
Gate resistance Drain-Source Diode Forward Voltage
Rev.06.
PPMT30V3 Datasheet
