QL63D4S-A Datasheet - QSI

QL63D4S-A LASER DIODE

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL63D4S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL63D4S-A/B/C InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. Ver. 3 2006 OVERVIEW QL63D4S-A/B/C is a MOCVD grown 635nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical ligh.

QL63D4S-A Features

* - Visible Light Output : λp = 635 nm - Optical Power Output : 5mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode

* ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode

QL63D4S-A-QSI.pdf