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QL85F6S-B - LASER DIODE

This page provides the datasheet information for the QL85F6S-B, a member of the QL85F6S-A LASER DIODE family.

Datasheet Summary

Features

  • - Visible Light Output : λp = 850 nm - Optical Power Output : 10mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode.

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Datasheet preview – QL85F6S-B

Datasheet Details

Part number QL85F6S-B
Manufacturer QSI
File Size 183.88 KB
Description LASER DIODE
Datasheet download datasheet QL85F6S-B Datasheet
Additional preview pages of the QL85F6S-B datasheet.

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Full PDF Text Transcription

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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL85F6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL85F6S-A/B/C AlGaAs Laser Diode Quantum Semiconductor International Co., Ltd. Ver.1 APR.2005 ♦OVERVIEW QL85F6SA is a MOCVD grown 850nm band AlGaAs laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 10mW for industrial optical module and sensor applications. ♦APPLICATION - Sensor - Industrial Optical Module ♦FEATURES - Visible Light Output : λp = 850 nm - Optical Power Output : 10mW CW - Package Type : TO-18 (5.
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