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HYB18T1G800BF Datasheet - Qimonda

1-Gbit Double-Data-Rate-Two SDRAM

HYB18T1G800BF Features

* The 1-Gbit Double-data-Rate SDRAM offers the following key features:

* Off-Chip-Driver impedance adjustment (OCD) and On

* 1.8 V ± 0.1 V Power Supply 1.8 V ± 0.1 V (SSTL_18) compatible I/O Die-Termination (ODT) for better signal quality

* DRAM organizations with 4, 8 and 16 d

HYB18T1G800BF General Description

Inputs are latched at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a single ended DQS or differential DQS-DQS pair in a source synchronous fashion. A 17-bit address bus for ×4 and ×8 organised components and a 16 bit address bus for ×16 components.

HYB18T1G800BF Datasheet (3.86 MB)

Preview of HYB18T1G800BF PDF

Datasheet Details

Part number:

HYB18T1G800BF

Manufacturer:

Qimonda

File Size:

3.86 MB

Description:

1-gbit double-data-rate-two sdram.
May 2007 www.DataSheet4U.com HY[B/I]18T1G400B[F/C](L) HY[B/I]18T1G800B[F/C](L) HY[B/I]18T1G160B[F/C](L) 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM.

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HYB18T1G800BF 1-Gbit Double-Data-Rate-Two SDRAM Qimonda

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