* o high gain.bandwidth product fT = 900MHz typo
* low noise figure NF = SdB typo at 470MHz 4.SdB max. at 200 MHz 2.Sd8 typo at 60MHz
* high unneutrolized power gain Gpe = 11.Sd8 min. at 200MHz
* hermetically sealed four-lead package
* all active elements insulated fr
2N3478
RCA
282.02 KB
Rf power transistors.
OO(]5LJD
Solid State Division
File No. 77
RF Power Tran$istors
2N3478
SILICON N-P-N EPITAXIAL PLANAR TRANSISTOR
JEDEC TD
*72
H-1299
For VHF/UH.
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