2N5838 Datasheet (RCA) - Power Transistors

2N5838, Power Transistors

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410 Power Transistors 2N5838 2N5839 2N5840 RCA 2N5838;2N5839 and 2N5840 are epitaxial silicon n-p-n power transistors utilizing a multiple-emitter-site structure.

These devices employ the popular ]EDEC TO-3 package; they differ mainly in voltage, currentgain, and VCE(sat) ratings.

Featuring high breakdown voltage ratings and low-saturation voltage values, the 2NS838, 2N5839 and 2N5840 are especially suitable for use in inverteIS, deflection circ

2N5838 Features

* Maximum safe-area-of-operation curves

* Low saturation voltages

* High voltage ratings VeER(s.s) = 375 V (2N5840) 300 V (2N5839) 275 V (2N5838)

* High dissipation rating PT = 100W !< z ~S! ~" ~ (IlCZ:~ a~~ ~~ ~~ t~il ." . ."~. .00ou.!::",zu""., S ~~ ~ ~B NO