2N5840 Datasheet - RCA

2N5840 Power Transistors

DlCIBLJI] Solid State Division FileNo. 410 Power Transistors 2N5838 2N5839 2N5840 RCA 2N5838;2N5839 and 2N5840 are epitaxial silicon n-p-n power transistors utilizing a multiple-emitter-site structure. These devices employ the popular ]EDEC TO-3 package; they differ mainly in voltage, currentgain, and VCE(sat) ratings. Featuring high breakdown voltage ratings and low-saturation voltage values, the 2NS838, 2N5839 and 2N5840 are especially suitable for use in inverteIS, deflection circ.

2N5840 Features

* Maximum safe-area-of-operation curves

* Low saturation voltages

* High voltage ratings VeER(s.s) = 375 V (2N5840) 300 V (2N5839) 275 V (2N5838)

* High dissipation rating PT = 100W !< z ~S! ~" ~ (IlCZ:~ a~~ ~~ ~~ t~il ." . ."~. .00ou.!::",zu""., S ~~ ~ ~B NO

2N5840 Datasheet (626.50 KB)