* of this device include linear gain control, high gain, and low noise figure. The IC is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process and is featured in an industry-standard miniature 6-lead plastic SOT package. 1.80 1.40 .50 .35 3.10 2.70 .10 MAX
RF2376
RF Micro Devices
112.97 KB
Cellular tdma/cdma linear variable gain amplifier.
Preliminary 4
Typical Applications
* CDMA Cellular Handsets
* TDMA Cellular Handsets
RF2376
CELLULAR TDMA/CDMA LINEAR VARIABLE GAIN A.
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