RF3826 9W GaN WIDEBAND

RF Micro Devices

Description

RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier RF3826 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier .
The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general pu.

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Datasheet Specifications

Part number: RF3826
Manufacturer: RF Micro Devices
File Size: 1.30 MB
Datasheet: RF3826_RFMicroDevices.pdf
Description: 9W GaN WIDEBAND

Features

* VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 30MHz to 2500MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance POUT 39.5dBm
* Gain 12dB
* Power Added Efficiency 45% (30MHz to 2500MHz

Applications

* such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain and large instantaneous bandwidth in a single amplifier des

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RF3826 GaN WIDEBAND RF Micro Devices

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