RF3826 - 9W GaN WIDEBAND

Product Overview

RF Micro Devices

Datasheet Details

Part number	RF3826
Manufacturer	RF Micro Devices
File Size	1.30 MB
Description	9W GaN WIDEBAND
Datasheet	RF3826 Datasheet
Additional preview pages of the RF3826 datasheet.

Product details

Description

The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification.

Features

VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 30MHz to 2500MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance POUT 39.5dBm.
Gain 12dB.
Power Added Efficiency 45% (30MHz to 2500MHz).
Power Added Efficiency 50% (200MHz to 1800MHz) -40°C to 85°C Operating Temperature.
RF IN Pin 2,3 RF OUT / VDS Pin 6,7.
GND BASE Functional Block Diagram Product Descript.

📁 Similar Datasheet

RF3808S - Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A) (International Rectifier)
RF300 - DPDT Non-Latching Electromechanical Relay (Teledyne)
RF3000 - C-Band LNA (Paradise Datacom)
RF3002A - SCHWIMMERSCHALTER HORIZ (ETC)
RF300C - Motor (TECO MOTOR)
RF300D - DPDT Non-Latching Electromechanical Relay (Teledyne)
RF300DD - DPDT Non-Latching Electromechanical Relay (Teledyne)
RF301 - Fast recovery Diodes (Rohm)

Other Datasheets by RF Micro Devices

RF3827 - LINEAR GENERAL PURPOSE AMPLIFIER
RF3800 - GaAs HBT PRE-DRIVER AMPLIFIER
RF3800PCBA-416 - GaAs HBT PRE-DRIVER AMPLIFIER
RF3802 - GaAs HBT PRE-DRIVER AMPLIFIER
RF3802PCBA-410 - GaAs HBT PRE-DRIVER AMPLIFIER
RF3802PCBA-411 - GaAs HBT PRE-DRIVER AMPLIFIER

Published: Nov 1, 2012 |