RTH35003-20D Datasheet - RFHIC

RTH35003-20D GaN Doherty Hybrid Amplifier

Package Type : SP-1E Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH35003-20D amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process. Electrical Specifications @ Vds=30V, Ta=25℃ PARAMETER Frequency Range Power Gain Gain Flatness.

RTH35003-20D Features

* GaN on SiC Chip on Board

* Surface Mount Hybrid Type

* 2-Stage Doherty Amplifier

* High Efficiency

* No Matching circuit needed Applications

* RF Sub-Systems

* Base Station

* RRH

* 4G/ LTE system

* Small cell Descript

RTH35003-20D-RFHIC.pdf

RTH35003-20D Datasheet Preview — Preview of RTH35003-20D PDF

Datasheet Details

Part number:

RTH35003-20D

Manufacturer:

RFHIC

File Size:

548.63 KB

Description:

Gan doherty hybrid amplifier.

RTH35003-20D Distributor

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RTH35003-20D RTH35003-20D GaN Doherty Hybrid Amplifier RFHIC