RTH35003-20D Datasheet (RFHIC) - GaN Doherty Hybrid Amplifier

RTH35003-20D, GaN Doherty Hybrid Amplifier

Package Type : SP-1E Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH35003-20D amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process.

Electrical Specifications @ Vds=30V, Ta=25℃ PARAMETER Frequency Range Power Gain Gain Flatness

RTH35003-20D Features

* GaN on SiC Chip on Board

* Surface Mount Hybrid Type

* 2-Stage Doherty Amplifier

* High Efficiency

* No Matching circuit needed Applications

* RF Sub-Systems

* Base Station

* RRH

* 4G/ LTE system

* Small cell Descript