RTH23007-10 Datasheet (RFHIC) - GaN Doherty Hybrid Amplifier

RTH23007-10, GaN Doherty Hybrid Amplifier

Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH23007-10 amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process.

This high performance amplifier achieves high efficiency of 45%, and powers 7W over the frequency range from 2300MHz to

RTH23007-10 Features

* GaN on SiC Chip on Board

* Surface Mount Hybrid Type

* Asymmetric Doherty Amplifier

* High Efficiency

* No Matching circuit needed Applications

* RF Sub-Systems

* Base Station

* RRH

* 4G/ LTE system

* Small cell Pack