RTH23007-10 Datasheet - RFHIC

RTH23007-10 GaN Doherty Hybrid Amplifier

Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH23007-10 amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process. This high performance amplifier achieves high efficiency of 45%, and powers 7W over the frequency range from 2300MHz to .

RTH23007-10 Features

* GaN on SiC Chip on Board

* Surface Mount Hybrid Type

* Asymmetric Doherty Amplifier

* High Efficiency

* No Matching circuit needed Applications

* RF Sub-Systems

* Base Station

* RRH

* 4G/ LTE system

* Small cell Pack

RTH23007-10-RFHIC.pdf

RTH23007-10 Datasheet Preview — Preview of RTH23007-10 PDF

Datasheet Details

Part number:

RTH23007-10

Manufacturer:

RFHIC

File Size:

285.60 KB

Description:

Gan doherty hybrid amplifier.

RTH23007-10 Distributor

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RTH23007-10 RTH23007-10 GaN Doherty Hybrid Amplifier RFHIC