Part number:
2SCR542F3
Manufacturer:
File Size:
1.45 MB
Description:
Middle power transistors.
* 1) Suitable for Middle Power Driver. 2) Low VCE(sat) VCE(sat)=0.20V(Max.). (IC/IB=1A/50mA) 3) High collector current. IC=3A(max),ICP=6A(max) 4) Leadless small SMD package (HUML2020L3) Excellent thermal and electrical conductivity. 5) Lead Free/Rohs Compliant. lOutline HUML2020L3 2SCR542
2SCR542F3
1.45 MB
Middle power transistors.
📁 Related Datasheet
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Structure NPN Silicon epitaxial planar transistor
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VCE (sat) = 0.4.
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isc Silicon NPN Power Transistors
DESCRIPTION ·DC Current Gain hFE :200-500@ IC= 0.5A ·Collector-Emitter Breakdown Voltage
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Parameter
VCEO IC
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Parameter
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NoNteRwecDoesmigmnesnded for
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Parameter
VCEO IC
Value
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lOutline
MPT3
Base Collector
Emitter
lFeature.
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Parameter
VCEO IC
Value
80V 2.5A
lFeatures
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