Part number:
2SCR542P
Manufacturer:
File Size:
1.77 MB
Description:
Middle power transistors.
* 1)Low saturation voltage,typically VCE(sat)=400mV(Max.) (IC/IB=2A/100mA) 2)High speed switching lOutline SOT-89 SC-62 MPT3 lInner circuit Datasheet lApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specifications Part No. Package Package size 2SCR542P SO
2SCR542P
1.77 MB
Middle power transistors.
📁 Related Datasheet
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Midium Power Transistors (30V / 5A)
2SCR542D
Structure NPN Silicon epitaxial planar transistor
Features 1) Low saturation voltage
VCE (sat) = 0.4.
2SCR542D - Silicon NPN Power Transistors
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isc Silicon NPN Power Transistors
DESCRIPTION ·DC Current Gain hFE :200-500@ IC= 0.5A ·Collector-Emitter Breakdown Voltage
: V(BR) CEO= 30V(Min) ·Min.
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Parameter VCEO
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3A
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1) Suitable for Middle Power Driver. 2) Low VCE(sat) VCE(.
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Parameter
VCEO IC
Value
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NoNteRwecDoesmigmnesnded for
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Datasheet
Parameter
VCEO IC
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lFeatures 1) Suitable for M.
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Parameter
VCEO IC
Value
50V 3A
lFeatures
1)Suitable for Middle Power Transistor 2) Complementary PNP .
2SCR544D - NPN Transistor
(ROHM)
2SCR544P / 2SCR544D
NPN 2.5A 80V Middle Power Transistor
Datasheet
Parameter
VCEO IC
Value
80V 2.5A
lOutline
MPT3
Base Collector
Emitter
lFeature.
2SCR544P - NPN Transistor
(ROHM)
2SCR544P
Middle Power Transistors (80V / 2.5A)
Parameter
VCEO IC
Value
80V 2.5A
lFeatures
1)Low saturation voltage,typically VCE(sat)=300mV(Max.) .
