* 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence.
* Circuit diagram 1 10 9 8(N.C) 3,4 5 6 7(N.C) 2
* Do not connnect to NC pin.
* Construction This product is a half bridge module consisting of SiC-UMOSFET and SiC-SBD from ROHM.
BSM180D12P3C007 Datasheet (1.49 MB)
BSM180D12P3C007
1.49 MB
Sic.
SiC Power Module BSM180D12P3C007 Datasheet Application Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction .
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