R6007ENJ Datasheet, Mosfet, ROHM

R6007ENJ Features

  • Mosfet 78W          lInner circuit 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to   be ±20V. 4) Drive circuits can be simple. 5) Parallel use is

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Part number:

R6007ENJ

Manufacturer:

ROHM ↗

File Size:

1.51MB

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📄 Datasheet

Description:

Power mosfet.

Datasheet Preview: R6007ENJ 📥 Download PDF (1.51MB)
Page 2 of R6007ENJ Page 3 of R6007ENJ

TAGS

R6007ENJ
Power
MOSFET
ROHM

📁 Related Datasheet

R6007ENJ - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6007ENJ FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res.

R6007ENX - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6007ENX FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res.

R6007ENX - Power MOSFET (ROHM)
R6007ENX   Nch 600V 7A Power MOSFET    Datasheet lOutline VDSS 600V   RDS(on)(Max.) 0.62Ω ID ±7A TO-220FM PD 46W          lInner circui.

R6007JND3 - Power MOSFET (ROHM)
R6007JND3   Nch 600V 7A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.780Ω ±7A 96W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistanc.

R6007JND3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6007JND3 FEATURES ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res.

R6007JNJ - Power MOSFET (ROHM)
R6007JNJ   Nch 600V 7A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.780Ω ±7A 96W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance.

R6007JNJ - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6007JNJ FEATURES ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resi.

R6007JNX - Power MOSFET (ROHM)
R6007JNX   Nch 600V 7A Power MOSFET    Datasheet lOutline VDSS 600V TO-220FM   RDS(on)(Max.) 0.780Ω   ID ±7A   PD 46W            lFe.

R6007JNX - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6007JNX FEATURES ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resi.

R6007KNJ - Power MOSFET (Rohm)
R6007KNJ   Nch 600V 7A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.62Ω ±7A 78W lFeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3) P.

Stock and price

ROHM Semiconductor
MOSFET N-CH 600V 7A LPTS
DigiKey
R6007ENJTL
842 In Stock
Qty : 500 units
Unit Price : $0.96
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