R6009KNJ Datasheet, Mosfet, ROHM

R6009KNJ Features

  • Mosfet 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lOutline TO-263 SC-83 LPT(S)          lInner circuit    Datashee

PDF File Details

Part number:

R6009KNJ

Manufacturer:

ROHM ↗

File Size:

1.18MB

Download:

📄 Datasheet

Description:

Power mosfet.

Datasheet Preview: R6009KNJ 📥 Download PDF (1.18MB)
Page 2 of R6009KNJ Page 3 of R6009KNJ

TAGS

R6009KNJ
Power
MOSFET
ROHM

📁 Related Datasheet

R6009KNJ - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6009KNJ FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res.

R6009KNX - Power MOSFET (ROHM)
.

R6009KNX - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6009KNX FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res.

R6009ENJ - Power MOSFET (ROHM)
R6009ENJ   Nch 600V 9A Power MOSFET    Datasheet VDSS 600V lOutline TO-263S   RDS(on)(Max.) 0.535Ω SC-83 ID ±9A LPT(S) PD lFeatures 94W .

R6009ENJ - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6009ENJ FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res.

R6009ENX - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6009ENX FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res.

R6009ENX - Power MOSFET (ROHM)
R6009ENX   Nch 600V 9A Power MOSFET    Datasheet lOutline VDSS 600V   RDS(on)(Max.) 0.535Ω ID ±9A TO-220FM PD 48W          lFeatures 1).

R6009JND3 - Power MOSFET (ROHM)
R6009JND3   Nch 600V 9A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.585Ω ±9A 125W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistan.

R6009JND3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6009JND3 FEATURES ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res.

R6009JNJ - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6009JNJ FEATURES ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resi.

Stock and price

ROHM Semiconductor
MOSFET N-CH 600V 9A LPTS
DigiKey
R6009KNJTL
0 In Stock
Qty : 500 units
Unit Price : $0.96
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