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R6009JNX

N-Channel MOSFET

R6009JNX Features

* Drain Current

* ID=9A@ TC=25℃

* Drain Source Voltage- : VDSS=600V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 585mΩ(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Designed for use in

R6009JNX General Description


*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 9 A IDM Drain Current-Single Pluse.

R6009JNX Datasheet (247.97 KB)

Preview of R6009JNX PDF

Datasheet Details

Part number:

R6009JNX

Manufacturer:

INCHANGE

File Size:

247.97 KB

Description:

N-channel mosfet.

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R6009JNX N-Channel MOSFET INCHANGE

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