R6047ENZ1 - Power MOSFET

Datasheet Details

1) Low on-resistance. lInner circuit 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V. e 4) Drive circuits can be simple. 5) Parallel use is easy. (1) Gate (2) Drain (3) Source.
1 BODY DIODE t 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging Tube Reel size (mm) - le l.

📁 R6047ENZ1 Similar Datasheet

R6046ANZ - Power MOSFET (Rohm)
R6046FNZ - Drive Nch MOSFET (Rohm)
R600 - General Purpose Rectifier (Powerex Power Semiconductors)
R6000 - High Voltage Rectifiers (LGE)
R6000F - 0.2mA Fast Recovery High Voltage Rectifier (Micro Commercial Components)
R6000GP - High Voltage Silicon Rectifier (MCC)
R6002END3 - N-Channel MOSFET (INCHANGE)
R6003KND3 - N-Channel MOSFET (INCHANGE)

Other Datasheets by ROHM

Published: Mar 15, 2021 |