RD3U060CN
1.47MB
Power mosfet.
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RD3U060CN - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
RD3U060CN
FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 250V(Min) ·Static Drain-Source On-R.
RD3U040CN - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
RD3U040CN
FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 250V(Min) ·Static Drain-Source On-R.
RD3U040CN - Power MOSFET
(ROHM)
.
RD3U041AAFRA - Power MOSFET
(ROHM)
RD3U041AAFRA
Nch 250V 4A Power MOSFET
Datasheet
lOutline
VDSS
250V
RDS(on)(Max.)
1.3Ω
DPAK
ID
±4.0A
TO-252
PD
29W
lFea.
RD3U080AAFRA - Power MOSFET
(ROHM)
.
RD3U080CN - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
RD3U080CN
FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 250V(Min) ·Static Drain-Source On-R.
RD3U080CN - Power MOSFET
(ROHM)
.
RD3.0E - Zener diode
(Excel Semiconductor)
RD2.0E~RD39E
Zener diode
Features
1. DO-35 Glass sealed package 2. Planar process 3. Vz applied E24 standard
Applications
Circuits for constant volta.
RD3.0E - SILICON ZENER DIODES
(EIC)
RD2.0E ~ RD39E
VZ : 2.0 - 39 Volts PD : 500 mW
FEATURES :
* Complete 2.0 to 39 Volts * High peak reverse power dissipation * High reliability * Low le.
RD3.0E - Zener Diode
(NEC)
DATA SHEET
ZENER DIODES
RD2.0E to RD200E
500 mW DHD ZENER DIODE (DO-35)
DESCRIPTION
NEC Type RD2.0E to RD200E Series are planar type zener diode in.