RD3U040CN Datasheet, Mosfet, INCHANGE

RD3U040CN Features

• Mosfet
• Drain Current
    –ID= 4A@ TC=25℃
• Drain Source Voltage- : VDSS= 250V(Min)
• Static Drain-Source On-Resistance : RDS(on) = 42mΩ(Max)
• 100% av

PDF File Details

Part number:

RD3U040CN

Manufacturer:

INCHANGE

File Size:

260.85kb

Download:

📄 Datasheet

Description:

N-channel mosfet. Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

RD3U040CN Application

• Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continu

TAGS

RD3U040CN

INCHANGE

📁 Related Datasheet

RD3U040CN - Power MOSFET (ROHM)
.

RD3U041AAFRA - Power MOSFET (ROHM)
RD3U041AAFRA 　　Nch 250V 4A Power MOSFET 　　 Datasheet lOutline VDSS 250V 　 RDS(on)(Max.) 1.3Ω DPAK ID ±4.0A TO-252 PD 29W 　 　　　　　　 lFea.

RD3U060CN - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor RD3U060CN FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-R.

RD3U060CN - Power MOSFET (ROHM)
.

RD3U080AAFRA - Power MOSFET (ROHM)
.

RD3U080CN - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor RD3U080CN FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-R.

RD3U080CN - Power MOSFET (ROHM)
.

RD3.0E - Zener diode (Excel Semiconductor)
RD2.0E~RD39E Zener diode Features 1. DO-35 Glass sealed package 2. Planar process 3. Vz applied E24 standard Applications Circuits for constant volta.

RD3.0E - SILICON ZENER DIODES (EIC)
RD2.0E ~ RD39E VZ : 2.0 - 39 Volts PD : 500 mW FEATURES : * Complete 2.0 to 39 Volts * High peak reverse power dissipation * High reliability * Low le.

RD3.0E - Zener Diode (NEC)
DATA SHEET ZENER DIODES RD2.0E to RD200E 500 mW DHD ZENER DIODE (DO-35) DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in.