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SCT2H12NZ N-channel SiC power MOSFET

SCT2H12NZ Description

SCT2H12NZ N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID PD 1700V 1.15 3.7A 35W *.

SCT2H12NZ Features

* 1) Low on-resistance 2) Fast switching speed 3) Long creepage distance 4) Simple to drive 5) Pb-free lead plating ; RoHS compliant

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Datasheet Details

Part number
SCT2H12NZ
Manufacturer
ROHM ↗
File Size
771.96 KB
Datasheet
SCT2H12NZ-ROHM.pdf
Description
N-channel SiC power MOSFET

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N-channel SiC power MOSFET ROHM
ROHM SCT2H12NZ-like datasheet