SCT20N120 Datasheet (STMicroelectronics) - Silicon carbide Power MOSFET

SCT20N120, Silicon carbide Power MOSFET

AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.

The outstanding thermal properties

SCT20N120 Features

* HiP247 3 2 1 D(2, TAB)

* Very low RDS(on) over the entire temperature range

* Very high operating junction temperature capability (TJ = 200 °C)

* Very fast and robust intrinsic body diode

* Low capacitance Applications

* AC-DC converters

* DC