Part number:
SCT20N120
Manufacturer:
File Size:
533.62 KB
Description:
Silicon carbide power mosfet.
SCT20N120-STMicroelectronics.pdf
Datasheet Details
Part number:
SCT20N120
Manufacturer:
File Size:
533.62 KB
Description:
Silicon carbide power mosfet.
SCT20N120, Silicon carbide Power MOSFET
AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.
This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
The outstanding thermal properties
SCT20N120 Features
* HiP247 3 2 1 D(2, TAB)
* Very low RDS(on) over the entire temperature range
* Very high operating junction temperature capability (TJ = 200 °C)
* Very fast and robust intrinsic body diode
* Low capacitance Applications
* AC-DC converters
* DC
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