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SCT20N120 Datasheet - STMicroelectronics

Silicon carbide Power MOSFET

SCT20N120 Features

* HiP247 3 2 1 D(2, TAB)

* Very low RDS(on) over the entire temperature range

* Very high operating junction temperature capability (TJ = 200 °C)

* Very fast and robust intrinsic body diode

* Low capacitance Applications

* AC-DC converters

* DC

SCT20N120 General Description

AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties .

SCT20N120 Datasheet (533.62 KB)

Preview of SCT20N120 PDF

Datasheet Details

Part number:

SCT20N120

Manufacturer:

STMicroelectronics ↗

File Size:

533.62 KB

Description:

Silicon carbide power mosfet.

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SCT20N120 Silicon carbide Power MOSFET STMicroelectronics

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