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SCT20N120 - Silicon carbide Power MOSFET

SCT20N120 Description

SCT20N120 Datasheet Silicon carbide Power MOSFET 1200 V, 169 mΩ typ., 20 A in an HiP247 package .
AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

SCT20N120 Features

* HiP247 3 2 1 D(2, TAB)
* Very low RDS(on) over the entire temperature range
* Very high operating junction temperature capability (TJ = 200 °C)
* Very fast and robust intrinsic body diode

SCT20N120 Applications

* AC-DC converters
* DC-DC converters
* Motor drives
* Solar inverters (string and central)

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Silicon carbide Power MOSFET STMicroelectronics
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