carbide Datasheet | Specifications & PDF Download

0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The

(17 views)

WAS175M12BM3, 5 WAS175M12BM3T 1200 V, 175 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • High H

(17 views)

G5S12020PMT Silicon Carbide Schottky Diode Features • Zero reverse recovery current • Zero forward recovery voltage • Temperature independent switchi

(17 views)

Silicon Carbide SJDP120R085 Normally-On Trench Silicon Carbide Power JFET Features: - Positive Temperature Coefficient for Ease of Paralleling - E

(14 views)

STPSC10065 Datasheet 650 V, 10 A low VF power Schottky silicon carbide diode K A K K A K TO-220AC AA NC D²PAK HV Product label Features • No o

(14 views)

  High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  210 °C maximum operating temperature  Zero reverse reco

(13 views)

VDS 1200 V C2M0025120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 63 A 25 mΩ N-Channel Enhancement Mode Fe

(13 views)

E3M0032120K Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET techno

(13 views)

MSC050SDA0170B Zero Recovery Silicon Carbide Schottky Diode 1 Product Overview This section shows the product overview for the MSC050SDA170B device

(13 views)

E4M0025075J2 Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 750V SiC MOSFET technology Tab

(13 views)

W W W.Microsemi .C O M WATERTOWN DIVISION PRELIMINARY UPSC200/UPSC400/UPSC600 Silicon Carbide Schottky Rectifiers PRODUCT PREVIEW DESCRIPTION In M

(13 views)

E4M0013120K Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • E4M generation SiC MOSFET techno

(13 views)

AOK060V65X2 650V αSiC Silicon Carbide Power MOSFET Features • Proprietary αSiC MOSFET technology • Low loss, with low RDS,(ON) • Fast switching with

(13 views)

GC2X10MPS12-247 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features  High Avalanche (UIS) Capability  Enhanced Surge Current Capability 

(12 views)

Normally – OFF Silicon Carbide Junction Transistor Features • 175 °C Maximum Operating Temperature • Gate Oxide Free SiC Switch • Exceptional Safe Ope

(12 views)

0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The

(12 views)

SCTHS300N75G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 750 V, 6.5 mΩ typ., 300 A in a STPAK package 4 1 4 32 STPAK Drain(4) Gate(3)

(12 views)

CCB016M12GM3, CCB016M12GM3T 1200 V, 16 mΩ, Silicon Carbide, Six-Pack Module Technical Features • Ultra-Low Loss • High Frequency Operation • Zero Turn

(12 views)

C3M0040120D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • High blo

(12 views)

C3D04060A 3rd Generation 600 V, 4 A Silicon Carbide Schottky Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier

(12 views)