.
Microsemi
0150SC-1250M - Silicon Carbide SIT
0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The .
ST Microelectronics
STPSC1206 - 600V power Schottky silicon carbide diode
www.DataSheet4U.com STPSC1206 600 V power Schottky silicon carbide diode Features ■ ■ ■ No reverse recovery Switching behavior independent of temper.
Microsemi
0405SC-2200M - Class AB 406 to 450 MHz Silicon Carbide SIT
0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The.
SemiSouth
SJDA065R055 - Normally-On Trench Silicon Carbide Power JFET
Normally-On Trench Silicon Carbide Power JFET Features: - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No.
WeEn
WNSC2D021200MB - Silicon Carbide Diode
WNSC2D021200MB Silicon Carbide Diode Rev.01 - 16 August 2024 Product data sheet 1. General description Silicon Carbide Schottky diode in a SMB plast.
CREE
C3D16065D - Silicon Carbide Schottky Diode
C3D16065D Silicon Carbide Schottky Diode Z-Rec® Rectifier Features Package VRRM = IF (TC=135˚C) = Qc = 650 V 22 A** 40 nC** • 650-Volt.
Cree
CMF10120D - Silicon Carbide Power MOSFET
CMF10120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET Features Package VDS ID(MAX) = 1200 V = 24 A N-Channel Enhancement Mode RDS(on).
Infineon
IDM05G120C5 - Silicon Carbide Schottky Diode
Diode Silicon Carbide Schottky Diode IDM05G120C5 5th Generation thinQ ™ 1200 V SiC Schottky Diode Final Datasheet Rev. 2.0 2015-08-28 Industrial Power.
Wolfspeed
C3M0015065D - Silicon Carbide Power MOSFET
C3M0015065D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • High blo.
Cree
C3M0065090D - Silicon Carbide Power MOSFET
VDS 900 V C3M0065090D ID @ 25˚C 36 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode .
Microsemi
0405SC-1000M - Silicon Carbide SIT
0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The .
Microsemi
0405SC-1500M - Silicon Carbide SIT
0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The .
CREE
C3M0032120K - Silicon Carbide Power MOSFET
VDS 1200 V C3M0032120K ID @ 25˚C 63 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 32 mΩ N-Channel Enhancement Mode .
Wolfspeed
E3M0016120K - Silicon Carbide Power MOSFET
E3M0016120K Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET techno.
Wolfspeed
E4M0013120K - Silicon Carbide Power MOSFET
E4M0013120K Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • E4M generation SiC MOSFET techno.
Wolfspeed
C3M0350120J - Silicon Carbide Power MOSFET
C3M0350120J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Features • 3rd generation Silicon Carbide (Si.
Wolfspeed
C2D10120D - 10A Silicon Carbide Schottky Diode
C2D10120D 1200 V, 10 A Silicon Carbide Schottky Diode Features • 1.2 kV Schottky rectifier • Zero reverse recovery current • Zero forward recovery vo.
Infineon
IDL10G65C5 - Silicon Carbide Diode
SiC Silicon Carbide Diode 5th Generation thinQ TM 650V SiC Schottky Diode IDL10G65C5 Final Data Sheet Rev. 2.0, 2013-12-05 Power Management & Multimar.
GeneSiC
1N8034-GA - High Temperature Silicon Carbide Power Schottky Diode
1N8034-GA High Temperature Silicon Carbide Power Schottky Diode Features 650 V Schottky rectifier 250 °C maximum operating temperature Electric.
GeneSiC
1N8033-GA - High Temperature Silicon Carbide Power Schottky Diode
1N8033-GA High Temperature Silicon Carbide Power Schottky Diode Features 650 V Schottky rectifier 250 °C maximum operating temperature Zero rev.