carbide Datasheet | Specifications & PDF Download

0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The

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G3R20MT17N 1700 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(ON)

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ESIC04065S Silicon carbide power schottky diode TO-220AC Features ‧Rated to 650V at 4 Amps ‧Zero reverse recovery current ‧Zero forward recovery vol

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• • • • • • • • • • (SMPS)，(PFC) • / • • ， • ， G5S12020U VRRM IF (TC = 148°C) Qc 1200V 20A 103nC TO-263 G = GPT 5 = S = 120 =

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650V Silicon Carbide Schottky Diode GENERAL DESCRIPTION ◆650V Schottky rectifier ◆Zero reverse recovery current/voltage ◆High frequency operation ◆Swi

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ShenZhen Hi-Semicon Electronics Co.,Ltd Datasheet SC3D20120D Silicon Carbide Schottky Barrier Diode Features Applications  1200-Vol t Schottky Re

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1200V Silicon Carbide Schottky Diode GENERAL DESCRIPTION ◆1200V Schottky rectifier ◆Zero Forward/Reverse Recovery Current ◆High Blocking Voltage ◆High

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ShenZhen Hi-Semicon Electronics Co.,Ltd Datasheet SC3D50065H Silicon Carbide Schottky Barrier Diode Features Applications VRRM=650V IF(TC=135℃ )=5

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UNISONIC TECHNOLOGIES CO., LTD USC120R040B 57A, 1200V N-CHANNEL SILICON CARBIDE PLANAR ENHANCEMENT POWER MOSFET  DESCRIPTION SiC The material can ach

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HMM60N120T Silicon Carbide Power MOSFET N-channel Enhancement Mode Features • High Blocking Voltage with Low On-Resistance • High Speed Switching wit

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SiC Silicon Carbide Diode 5th Generation thinQ TM 650V SiC Schottky Diode IDK02G65C5 Final Data Sheet Rev. 2.1, 2017-08-11 Power Management & Multimar

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PRELIMINARY Silicon Carbide SJEP120R063 Normally-OFF Trench Silicon Carbide Power JFET Features: - Compatible with Standard Gate Driver ICs - Pos

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MSP10065V1 MSP10065V1 650V Silicon Carbide Diode Features -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-F

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NXPSC06650D Silicon Carbide Diode 4 January 2017 Product data sheet 1. General description Silicon Carbide Schottky diode designed for high frequenc

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NXPSC04650 Silicon Carbide Diode 8 October 2018 Product data sheet 1. General description Silicon Carbide Schottky diode in a SOD59A (TO-220AC) plas

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MSC010SDA070B Zero Recovery Silicon Carbide Schottky Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line

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MSC010SDA170B Zero Recovery Silicon Carbide Schottky Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line

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MSF10065V1 MSF10065V1 650V Silicon Carbide Diode Features -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Fr

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GD60MPS17H 1700V 60A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Enhanced Surge and Aval

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