SJEP120R063 Datasheet - SemiSouth

SJEP120R063, Normally-OFF Trench Silicon Carbide Power JFET

PRELIMINARY Silicon Carbide SJEP120R063 Normally-OFF Trench Silicon Carbide Power JFET

Features

* - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 150 °C Maximum Operating Temperature - RDS(on)max of 0.063 Ω - Voltage Controlled - Low Gate Charge 4 - Low Intrinsic Capacitance Product Summ

Applications

* - Solar Inverter - SMPS - Power Factor Correction - Induction Heating - UPS - Motor Drive TO-247 3 2 1 S(3) Internal Schematic MAXIMUM RATINGS Parameter Symbol Conditions Continuous Drain Current ID, Tj=125 ID, Tj=150 Pulsed Drain Current (1) IDM Short Circuit Withstand Time tSC Power

SJEP120R063-SemiSouth.pdf